xp1006 m/a-com tech asia 10004966 tno copyright 2005 x=4940 y=4290 chip device layout m/a-com tech asias three stage 8.5-11.0 ghz gaas mmic power amplifier has a large signal gain of 21.0 db with a +40.0 dbm saturated output power and also includes on-chip gate bias circuitry. this mmic uses m/a-com tech asias gaas phemt device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for radar applications. ? x-band 10w power amplifier ? 21.0 db large signal gain ? +40.0 dbm saturated output power ? 30% power added efficiency ? on-chip gate bias circuit ? 100% on-wafer rf, dc and output power testing ? 100% visual inspection to mil-std-883 method 2010 features general description electrical characteristics (pulsed mode f=10 khz, duty cycle=10%, ta=25oc) parameter frequency range (f) input return loss (s11) output return loss (s22) large signal gain (s21) gain flatness ( s21) reverse isolation (s12) saturated output power (psat) power added efficiency (pae) drain bias voltage (vd1,2,3) gate bias voltage (vgg) supply current (id) (vd=8.0v, vgg=-5.0v typical) units ghz db db db db db dbm % vdc vdc a min. 8.5 - - - - - - - - - - typ. - 15.0 12.0 21.0 +/-0.5 60.0 +40.0 30 +8.0 -5.0 4.2 max. 11.0 - - - - - - - +8.5 - 4.5 absolute maximum ratings supply voltage (vd) supply current (id) gate bias voltage (vg) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +8.5 vdc 4.5 a +0.0 vdc tbd -65 to +165 o c -55 to mttf table 1 mttf table 1 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 1 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
power amplifier measurements (pulsed mode f=10 khz, duty cycle=10%, ta=25oc) large signal gain (v d =8v, v gg =-5v, ps=19dbm) 12 14 16 18 20 22 24 8 8.5 9 9.5 10 10.5 11 frequency [ghz] gt [db] input return loss (v d =8v, v gg =-5v) -30 -25 -20 -15 -10 -5 0 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency [ghz] s11 [db] reverse isolation (v d =8v, v gg =-5v) -120 -100 -80 -60 -40 -20 0 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency [ghz] s12 [db] output return loss (v d =8v, v gg =-5v) -30 -25 -20 -15 -10 -5 0 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency [ghz] s22 [db] large signal gain 15 16 17 18 19 20 21 22 8 8.5 9 9.5 10 10.5 11 frequency [ghz] gt [db] 10c 30c 50c 70c 90c large signal gain vs drain voltage (v gg =-5v) 16 17 18 19 20 21 22 23 8 8.5 9 9.5 10 10.5 11 frequency [ghz] gt [db] 6v, ps=18dbm 7v, ps=18dbm 8v, ps=19dbm 9v, ps=19dbm xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 2 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
power amplifier measurements (cont.) output power vs drain voltage (v gg =-5v) 34 35 36 37 38 39 40 41 42 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pout [dbm] 6v, ps=18dbm 7v, ps=18dbm 8v, ps=19dbm 9v, ps=19dbm power added efficiency vs drain voltage (v gg =-5v) 15 17 19 21 23 25 27 29 31 33 35 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pae [%] 6v, ps=18dbm 7v, ps=18dbm 8v, ps=19dbm 9v, ps=19dbm output power 35 36 37 38 39 40 41 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pout [dbm] 10c 30c 50c 70c 90c power added efficiency 10 15 20 25 30 35 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pae [%] 10c 30c 50c 70c 90c output power (v d =8v, v gg =-5v, ps=19dbm) 32 33 34 35 36 37 38 39 40 41 42 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pout [dbm] power added efficiency (v d =8v, v gg =-5v, ps=19dbm) 10 15 20 25 30 35 8 8.5 9 9.5 10 10.5 11 frequency [ghz] pae [%] xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 3 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
power amplifier measurements (cont.) xp1006, phase (degrees) vs gain compression (db) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 gain compression (db) relative phase (deg) xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 4 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
mechanical drawing (note: engineering designator is i0004966) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 13.136 mg. bond pad #1 (rf in) bond pad #2 (vgg) bond pad #3 (vg) bond pad #4 (vg1a) bond pad #5 (vd1a) bond pad #6 (vg2a) bond pad #7 (vd2a) bond pad #8 (vg3a) bond pad #9 (vd3a) bond pad #10 (rf out) bond pad #11 vd3b) bond pad #12 (vg3b) bond pad #13 (vd2b) bond pad #14 (vg2b) bond pad #15 (vd1b) bond pad #16 (vg1b) bond pad #17 (vg) bond pad #18 (vgr) pad locations rf/dc pads rf in/out vgg, vg, vg1a, vd1a, vg2a, vg3a, vg1b, vd1b, vg2b, vg3b vd2a, vd2b vd3a, vd3b size [mm] 0.120x0.200 0.100x0.100 0.250x0.100 0.247x0.153 [inches] 0.005x0.008 0.004x0.004 0.010x0.004 0.010x0.006 4.290 (0.169) 1 2 3 4 5 6 10 11 12 13 0.170 (0.007) 0.470 (0.018) 0.620 (0.024) 1.054 (0.041) 4.249 (0.167) 2.738 (0.108) 1.796 (0.071) 1.354 (0.053) 0.0 0.0 2.145 (0.084) 14 1.054 (0.041) 15 0.620 (0.024) 16 0.470 (0.018) 17 0.170 (0.007) 18 1.354 (0.053) 9 4.249 (0.167) 8 2.738 (0.108) 7 1.796 (0.071) 2.144 (0.084) 4.940 (0.194) xp1006 m/a-com tech asia 10004966 tno copyright 2005 x=4940 y=4290 xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 5 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
app note [1] biasing - this device is biased by applying vd(1,2,3) = 8.0v with a total drain current i(total)=4.2 a. the gate bias can be applied in one of three ways by using either vgg (pin #2), vgr (pin #18) or vg (pin #3 or #17). 1) vgg (pin #2) applies a scaled gate voltage to all fets through a fet / resistor divider (vto compensated) bias network. applying -5v to vgg (pin #2) will typically draw 4.2a with no further adjustment necessary. wafer lot variation may result in some devices experiencing higher or lower drain currents than the typical 4.2a. 2) vgr (pin #18) applies a scaled gate bias to all fets through a resistive divider network. applying -5v to vgr (pin #18) will typically draw 4.2a, however, the gate bias will need to be actively adjusted to regulate the desired drain current. 3) vg (pin #3 or pin #17) provides a direct gate bias input to all the mmic stages. this method of biasing allows the user to control the total drain current, without the scaling factor. the typically gate bias for operation is -0.9v. make sure to sequence the applied voltage to ensure that negative gate bias is available before applying the positive drain supply. app note [2] bias arrangement - each dc pad (vd1,2,3 and vg1,2,3 or vgg) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. app note [3] further information - more application information is available on our website under products -> product support -> application notes. please refer to application of m/a-com tech asia's x-band, 10-watt power amplifier mmic and epoxy die attach considerations for hpa mmics. bias arrangement bypass capacitors - see app note [2] xp1006 rf out vd1a,2a,3a vgg rf in vd1b,2b,3b 1 2 3 4 5 6 10 11 12 13 14 15 16 17 18 9 8 7 xp1006 m/a-com tech asia 10004966 tno copyright 2005 x=4940 y=4290 vd2a rf in rf out vd1a vd3a vd2b vd3b vd1b vgg xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 6 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
mttf bias conditions: vd1=vd2=vd3=8.0v, id( total )=4.2a mttf is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. xp1006, mttf with rf power applied 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 1.0e+06 20 30 40 50 60 70 80 90 100 110 120 backplate temperature (c) mttf (millions of hours) 100% dc duty cycle 50% dc duty cycle 30% dc duty cycle 10% dc duty cycle xp1006, mttf without rf power 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 20 30 40 50 60 70 80 90 100 110 120 backplate temperature (c) mttf (millions of hours) 100% dc duty cycle 50% dc duty cycle 30% dc duty cycle 10% dc duty cycle xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 7 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed.
xp1006-bd rev 01-sep-10 8.5-11.0 ghz gaas mmic power amplifier page 8 of 8 3f, 3-2 industry east ix road, science-based industrial park hsinchu 30075 taiwan, r.o.c tel +886-3-567-9680 / fax +886-3-567-9433 email mtatechnicalhelp@macomtech.com visit macomtechasia.com for additional data sheets and product information. characteristic data and specifications are subject to change without notice. ?2010 m/a-com tech asia advanced: data sheets contain information regarding a product m/a-com tech asia is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com tech asia has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. handling and assembly information ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - m/a-com tech asia's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of m/a-com tech asia. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in anti-static containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from m/a-com tech asia are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the m/a-com tech asia "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310oc +/- 10o c. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. ordering information part number for ordering description XP1006-BD-000V v - vacuum release gel paks c a u t i o n : e s d s e n s i t i v e appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. caution! - m/a-com tech asia mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures:
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